ACM Research Ships First PECVD SiCN System for Advanced Semiconductor Applications

FREMONT, Calif., April 27, 2026 (GLOBE NEWSWIRE) -- ACM Research, Inc. ("ACM") (NASDAQ:ACMR), a leading supplier of wafer and panel processing solutions for semiconductor and advanced packaging applications, today announced it has shipped its first plasma-enhanced chemical vapor deposition (PECVD) silicon carbonitride (SiCN) system to a leading semiconductor manufacturer. As the latest addition to the Saturn Series of the ACM Planetary Family, this system met customer-defined process specifications in ACM's Lingang lab and has been shipped to the customer site for validation. Designed to address advanced back-end-of-line (BEOL) requirements, the system also positions ACM to serve the growing opportunity in advanced packaging applications.

ACM's PECVD SiCN system is built on a proprietary deposition architecture that departs from conventional approaches by distributing the process across three stations within a single reaction chamber, making it the world's first three-station PECVD design. In this rotating deposition scheme, each station deposits one-third of the total film, enabling tighter control over interface layer formation, gas flow management and film uniformity across the wafer. Complementing this architecture, ACM's "One Station, One RF" control software technology provides independent plasma control at each station through dedicated radio frequency (RF) systems, helping improve process stability and enhance consistency across stations.

"The shipment of our first PECVD SiCN system marks an important milestone as ACM continues to expand its process technology capabilities," said Dr. David Wang, President and Chief Executive Officer of ACM. "This platform features an innovative equipment design to support more advanced process requirements and deliver the control and consistency needed for increasingly complex semiconductor manufacturing and next-generation device integration."

The system is designed to support PECVD SiCN processes for advanced BEOL applications at 55-nanometer and below, including copper oxidation reduction, copper diffusion barrier layers and etch stop layers. As logic devices scale and integration requirements become more demanding, tighter control of particles, plasma stability and interface layers become increasingly critical. These same requirements are also driving demand for SiCN films in advanced packaging workflows, where their properties are well-suited for applications such as wafer-level bonding in next-generation device integration. In these applications, the strong adhesion, high bonding energy and dense film characteristics of SiCN can help improve integration reliability, inhibit metal ion diffusion and support higher-density device architectures.

About the PECVD SiCN System

The ACM PECVD SiCN system is configured for 300-millimeter wafer processing, supports process temperatures up to 400 degrees Celsius (°C), and features four load ports and three process chambers to support high-efficiency wafer handling and flexible process operation.

Forward-Looking Statements

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About ACM Research, Inc.



ACM develops, manufactures and sells semiconductor process equipment spanning cleaning, electroplating, stress-free polishing, vertical furnace processes, track, PECVD, and wafer- and panel-level packaging tools, enabling advanced and semi-critical semiconductor device manufacturing. ACM is committed to delivering customized, high-performance, cost-effective process solutions that semiconductor manufacturers can use in numerous manufacturing steps to improve productivity and product yield. For more information, visit www.acmr.com.

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